Study on the Current-voltage and Breakdown Characteristics for MOS Devices with Ultra-thin Gate Oxides Under High Field Stress
| Author | : 黃嘉宏 |
| Publisher | : |
| Total Pages | : 93 |
| Release | : 2001 |
| ISBN-10 | : OCLC:442395263 |
| ISBN-13 | : |
| Rating | : 4/5 (63 Downloads) |
Book Synopsis Study on the Current-voltage and Breakdown Characteristics for MOS Devices with Ultra-thin Gate Oxides Under High Field Stress by : 黃嘉宏
Download or read book Study on the Current-voltage and Breakdown Characteristics for MOS Devices with Ultra-thin Gate Oxides Under High Field Stress written by 黃嘉宏 and published by . This book was released on 2001 with total page 93 pages. Available in PDF, EPUB and Kindle. Book excerpt:
