Hot Carrier Reliability of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration

Hot Carrier Reliability of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration
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Total Pages : 84
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ISBN-10 : OCLC:1021101827
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Rating : 4/5 (27 Downloads)

Book Synopsis Hot Carrier Reliability of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration by : 沈尚鋒

Download or read book Hot Carrier Reliability of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration written by 沈尚鋒 and published by . This book was released on 2017 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt:


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As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design