Hot Carrier Reliability Model and Its Applicable Range of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration
Author | : 陳怡婷 |
Publisher | : |
Total Pages | : 115 |
Release | : 2020 |
ISBN-10 | : OCLC:1232223093 |
ISBN-13 | : |
Rating | : 4/5 (93 Downloads) |
Download or read book Hot Carrier Reliability Model and Its Applicable Range of High Voltage MOSFET for Different Lightly Doped Drain Doping Concentration written by 陳怡婷 and published by . This book was released on 2020 with total page 115 pages. Available in PDF, EPUB and Kindle. Book excerpt: