Asymmetric Coupling Effect on the I-V Characteristic of Ultrathin-oxide MIS Devices and Its Applications

Asymmetric Coupling Effect on the I-V Characteristic of Ultrathin-oxide MIS Devices and Its Applications
Author :
Publisher :
Total Pages :
Release :
ISBN-10 : OCLC:1134121742
ISBN-13 :
Rating : 4/5 (42 Downloads)

Book Synopsis Asymmetric Coupling Effect on the I-V Characteristic of Ultrathin-oxide MIS Devices and Its Applications by : 陳昱諠

Download or read book Asymmetric Coupling Effect on the I-V Characteristic of Ultrathin-oxide MIS Devices and Its Applications written by 陳昱諠 and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:


Asymmetric Coupling Effect on the I-V Characteristic of Ultrathin-oxide MIS Devices and Its Applications Related Books

Asymmetric Coupling Effect on the I-V Characteristic of Ultrathin-oxide MIS Devices and Its Applications
Language: en
Pages:
Microsupercapacitors
Language: en
Pages: 312
Authors: Kazufumi Kobashi
Categories: Technology & Engineering
Type: BOOK - Published: 2021-10-01 - Publisher: Woodhead Publishing

DOWNLOAD EBOOK

Microsupercapacitors systematically guides the reader through the key materials, characterization techniques, performance factors and potential applications and
Electrical Characterization of Silicon-on-Insulator Materials and Devices
Language: en
Pages: 389
Authors: Sorin Cristoloveanu
Categories: Technology & Engineering
Type: BOOK - Published: 2013-11-27 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device
Semiconductor Material and Device Characterization
Language: en
Pages: 800
Authors: Dieter K. Schroder
Categories: Technology & Engineering
Type: BOOK - Published: 2015-06-29 - Publisher: John Wiley & Sons

DOWNLOAD EBOOK

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characteri