Tetrahedrally-Bonded Amorphous Semiconductors

Tetrahedrally-Bonded Amorphous Semiconductors
Author :
Publisher : Springer
Total Pages : 557
Release :
ISBN-10 : 9781489953612
ISBN-13 : 1489953612
Rating : 4/5 (12 Downloads)

Book Synopsis Tetrahedrally-Bonded Amorphous Semiconductors by : David A. Adler

Download or read book Tetrahedrally-Bonded Amorphous Semiconductors written by David A. Adler and published by Springer. This book was released on 2013-12-19 with total page 557 pages. Available in PDF, EPUB and Kindle. Book excerpt:


Tetrahedrally-Bonded Amorphous Semiconductors Related Books

Tetrahedrally-Bonded Amorphous Semiconductors
Language: en
Pages: 557
Authors: David A. Adler
Categories: Technology & Engineering
Type: BOOK - Published: 2013-12-19 - Publisher: Springer

DOWNLOAD EBOOK

Tetrahedrally Bonded Amorphous Semiconductors, Yorktown Heights, 1974
Language: en
Pages: 392
Authors: Marc Herbert Brodsky
Categories: Medical
Type: BOOK - Published: 1974 - Publisher:

DOWNLOAD EBOOK

Tetrahedrally Bonded Amorphous Carbon Films I
Language: en
Pages: 769
Authors: Bernd Schultrich
Categories: Technology & Engineering
Type: BOOK - Published: 2018-03-10 - Publisher: Springer

DOWNLOAD EBOOK

This book presents the status quo of the structure, preparation, properties and applications of tetrahedrally bonded amorphous carbon (ta-C) films and compares
Physics of Amorphous Semiconductors
Language: en
Pages: 440
Authors: Kazuo Morigaki
Categories: Technology & Engineering
Type: BOOK - Published: 1999 - Publisher: World Scientific

DOWNLOAD EBOOK

This is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamental
Fundamental Physics of Amorphous Semiconductors
Language: en
Pages: 190
Authors: F. Yonezawa
Categories: Technology & Engineering
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics