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Power Devices and Integrated Circuits Based on 4H-SiC Lateral JFETs
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Type: BOOK - Published: 2010 - Publisher:

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Silicon carbide (SiC) is a wide-bandgap semiconductor that has drawn significant research interest for the next-generation power electronics due to its superior
Development of 4H Silicon Carbide JFET-based Power Integrated Circuits
Language: en
Pages: 140
Authors: Yongxi Zhang
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4H-Silicon Carbide (4H-SiC) is a promising semiconductor for the next generation of high power, high frequency, and high temperature applications. Significant p
Fabrication and Characterization of 4h-sic Jfet-based Integrated Circuits
Language: en
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Type: BOOK - Published: 2019 - Publisher:

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This dissertation demonstrates 4H-SiC integrated circuits (ICs) operating to 500 deg.C (932 deg.F), using 10 μm, n-channel depletion mode junction field-effect
On the Perspectives of Wide-Band Gap Power Devices in Electronic-Based Power Conversion for Renewable Systems
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4H-SiC Integrated Circuits for High Temperature and Harsh Environment Applications
Language: en
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Authors: Mihaela Alexandru
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Silicon Carbide (SiC) has received a special attention in the last decades thanks to its superior electrical, mechanical and chemical proprieties. SiC is mostly