Physics and Technology of Silicon Carbide Devices

Physics and Technology of Silicon Carbide Devices
Author :
Publisher :
Total Pages : 284
Release :
ISBN-10 : 1681176432
ISBN-13 : 9781681176437
Rating : 4/5 (32 Downloads)

Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs

Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.


Physics and Technology of Silicon Carbide Devices Related Books

Fundamentals of Silicon Carbide Technology
Language: en
Pages: 565
Authors: Tsunenobu Kimoto
Categories: Technology & Engineering
Type: BOOK - Published: 2014-11-24 - Publisher: John Wiley & Sons

DOWNLOAD EBOOK

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a num
Physics and Technology of Silicon Carbide Devices
Language: en
Pages: 284
Authors: George Gibbs
Categories:
Type: BOOK - Published: 2016-10-01 - Publisher:

DOWNLOAD EBOOK

Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material l
Physics and Technology of Silicon Carbide Devices
Language: en
Pages: 416
Authors: Yasuto Hijikata
Categories: Science
Type: BOOK - Published: 2012-10-16 - Publisher: BoD – Books on Demand

DOWNLOAD EBOOK

Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), an
Silicon Carbide
Language: en
Pages: 911
Authors: Wolfgang J. Choyke
Categories: Technology & Engineering
Type: BOOK - Published: 2013-04-17 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., ther
Silicon Carbide Power Devices
Language: en
Pages: 526
Authors: B. Jayant Baliga
Categories: Technology & Engineering
Type: BOOK - Published: 2006-01-05 - Publisher: World Scientific

DOWNLOAD EBOOK

Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost red