Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals
Author | : Daniel Montero Álvarez |
Publisher | : Springer Nature |
Total Pages | : 262 |
Release | : 2021-01-08 |
ISBN-10 | : 9783030638269 |
ISBN-13 | : 303063826X |
Rating | : 4/5 (69 Downloads) |
Download or read book Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals written by Daniel Montero Álvarez and published by Springer Nature. This book was released on 2021-01-08 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations. Afterwards, the crystallinity is recovered by means of a pulsed laser process. The material is used to fabricate planar photodiodes, which are later characterized using current-voltage and quantum efficiency measurements. The prototypes showed improved sub-bandgap responsivity up to 0.45 eV at room temperature. The work is further supported by a collaboration with STMicroelectronics, where the supersaturated material was integrated into CMOS-based sensors at industry level. The results show that Ti supersaturated Si is compatible in terms of contamination, process integration and uniformity. The devices showed similar performance to non-implanted devices in the visible region. This fact leaves the door open for further integration of supersaturated materials into CMOS Image Sensors.