Monte Carlo Simulation of Semiconductor Devices

Monte Carlo Simulation of Semiconductor Devices
Author :
Publisher : Springer Science & Business Media
Total Pages : 343
Release :
ISBN-10 : 9789401581332
ISBN-13 : 9401581339
Rating : 4/5 (32 Downloads)

Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue

Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.


Monte Carlo Simulation of Semiconductor Devices Related Books

Monte Carlo Simulation of Semiconductor Devices
Language: en
Pages: 343
Authors: C. Moglestue
Categories: Computers
Type: BOOK - Published: 2013-04-17 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a
The Monte Carlo Method for Semiconductor Device Simulation
Language: en
Pages: 382
Authors: Carlo Jacoboni
Categories: Technology & Engineering
Type: BOOK - Published: 1989-10-30 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors,
The Monte Carlo Method for Semiconductor Device Simulation
Language: en
Pages: 370
Authors: Carlo Jacoboni
Categories: Technology & Engineering
Type: BOOK - Published: 2012-12-06 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors,
Hierarchical Device Simulation
Language: en
Pages: 282
Authors: Christoph Jungemann
Categories: Technology & Engineering
Type: BOOK - Published: 2003-06-05 - Publisher: Springer Science & Business Media

DOWNLOAD EBOOK

This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo
Introduction to Semiconductor Device Modelling
Language: en
Pages: 242
Authors: Christopher M. Snowden
Categories: Science
Type: BOOK - Published: 1998 - Publisher: World Scientific

DOWNLOAD EBOOK

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentra