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In the endeavor to increase integrated circuit chip densities and improve performance, MOSFET dimensions have been rapidly decreasing over the past four decades
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The scaling of MOSFETs as dictated by the ITRS has continued unabated for many years and enabled the worldwide semiconductor market to grow at a phenomenal rate
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Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advan
Simulation and Design of Germanium-based Mosfets for Channel Lengths of 100 Nm and BelowW
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The purpose of this study is to examine the performance capabilities and scaling behavior of short channel Ge-based n-MOSFETs using a commercial numerical devic
Chemical Abstracts
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