Download or read book Physical Defects and Degradation Mechanisms of GaN-based Electronic Devices Explored by Transmission Electron Microscopy written by Andrew Charles Lang and published by . This book was released on 2018 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The maturation of new semiconductor and device technology is dependent upon our understanding of device reliability. Silicon has had the benefit of more than 50 years of science, engineering, and statistics, leading to an incredibly mature and robust material platform. Newer device platforms, like GaN, represent exciting new prospects but their technology has yet to mature to reach Si's level reliability. While the properties of GaN devices exceed those of conventional Si- or GaAs-based devices, widespread adoption of GaN technology has been slow due to insufficient understanding of its reliability and device degradation mechanisms. This thesis investigates the degradation mechanisms of GaN-based devices using high-resolution electron microscopy. Transmission electron microscopy (TEM) and scanning-TEM (STEM) are combined with spectroscopic techniques including electron energy-loss spectroscopy (EELS) and energy dispersive x-ray spectroscopy (EDS) to reveal the microstructural evolution of stressed GaN devices. Collectively this work illustrates the importance of physical characterization on developing semiconductor systems. While the vast majority of device characterization is driven by electrical characteristics, the microscopic characterization of devices is an excellent complement to traditional techniques.